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Product Detailed Parameters
- Description：MOSFET N-CH 30V 9A 8SOP
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：18.5mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：741 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOP
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMN3031LSS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a SO-8 surface-mount package and operates with a drain-source voltage of 30V and a continuous drain current of 9A at 25°C. The device exhibits a typical on-resistance of 18.5mΩ at VGS=10V and 31mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage range of 1V to 2.1V, total gate charge of 7.6nC to 16.7nC, and input capacitance of 741pF. Thermal characteristics specify a power dissipation of 2.5W and a junction-to-ambient thermal resistance of 50°C/W.
Feature Summary
- Low on-resistance for efficient conduction
- Fast switching speed capabilities
- Qualified to AEC-Q101 standards for high reliability
Applications
- Power management circuits
- Load switching applications
- DC-DC converter designs
Procurement Notes
Verify the component status before procurement as the datasheet explicitly states it is not recommended for new design. Confirm availability through authorized distributors and check for the specific -13 suffix indicating tape and reel packaging. Ensure compliance with RoHS requirements and moisture sensitivity level 1 handling procedures during assembly.
Selection Notes
Select this component for low-voltage switching applications requiring high current capability in an SO-8 package. Consider the 30V rating and 9A continuous current limits when designing circuit protection. Evaluate thermal performance based on the 50°C/W junction-to-ambient resistance and ensure adequate PCB copper area for heat dissipation.
Part Context
This part belongs to the DMN3031 series of N-channel MOSFETs from Diodes Incorporated. It is designed for general-purpose switching applications where low on-resistance and fast switching are critical. The device utilizes silicon technology and is housed in a standard SO-8 plastic case with matte tin terminals.
Replacement Considerations
The datasheet recommends using the DMN3030LSS as a replacement or alternative for new designs. Verify pin compatibility and electrical specifications between the two parts before substitution.
