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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 6.2A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6.2A
- Rds On (Max) @ Id, Vgs：30mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：500pF @ 15V
- Power - Max：1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：U-DFN2020-6 (Type B)
- Grade：-
- Qualification：-
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Overview
The DMN3032LFDBQ-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 package and operates within a -55°C to +150°C junction temperature range. Key electrical parameters include a drain-source voltage (VDS) of 30V, a continuous drain current (ID) of 6.2A at 25°C, and a maximum on-resistance (RDS(on)) of 30mΩ at VGS=10V. The device has a gate-source voltage rating of ±20V, a total gate charge (Qg) of 10.6nC at VGS=10V, and a power dissipation of 1.0W to 1.7W depending on mounting conditions.
Feature Summary
- Qualified to AEC-Q101 standards for automotive reliability with PPAP capability
- 100% unclamped inductive switching tested for robust application performance
- Low profile U-DFN2020-6 package designed for increased power density
Applications
- Body control electronics
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix against official documentation before purchase. The '-7' suffix indicates a tape and reel packaging quantity of 3,000 units. Confirm that the component meets all required environmental compliance standards, including RoHS and halogen-free specifications, for your intended manufacturing process.
Selection Notes
Select this component when a dual N-channel configuration is required in a compact surface-mount footprint. Ensure the design accommodates the 30V drain-source voltage limit and verify that the thermal resistance characteristics align with the expected power dissipation requirements under steady-state or pulsed operating conditions.
Part Context
This part belongs to the DMN3032 series of dual N-channel MOSFETs from Diodes Incorporated. It shares the same core electrical specifications as the non-qualified DMN3032LFDB variant but includes additional automotive qualification certifications. The primary distinction lies in the reliability testing and documentation provided for automotive supply chain integration.
Replacement Considerations
Direct substitutes include the DMN3032LFDB-13, which offers identical electrical performance but differs in packaging quantity (10,000 units per reel). Verify pinout compatibility and thermal characteristics when considering alternative packages or manufacturers.
