DMN3032LQ-7

$0.08

Description：MOSFET BVDSS: 8V~24V SOT23 T&R 3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:57340778d545 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 8V~24V SOT23 T&R 3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：31mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：481 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：800mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN3032LQ-7

Overview

The DMN3032LQ-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 30V and a gate-source voltage (VGSS) rating of ±20V. The device supports a continuous drain current of 5.4A at +25°C, with a maximum static drain-source on-resistance (RDS(ON)) of 31mΩ at VGS=10V and 45mΩ at VGS=4.5V. It operates within a temperature range of -55°C to +150°C and is housed in a SOT23 package.

Feature Summary

Qualified for automotive applications under AEC-Q101 standards
Capable of PPAP submission for specific change control requirements
Manufactured in IATF 16949 certified facilities
Totally lead-free and fully RoHS compliant

Applications

Backlighting circuits
Power-management functions
DC-DC converters

Procurement Notes

Verify the component against the official datasheet DS44962 Rev. 2-2 to confirm electrical parameters and package dimensions. Ensure the ordering suffix matches the required packing quantity, as the -7 suffix indicates a tape and reel carrier with a quantity of 3000 units. Confirm compliance with RoHS and halogen-free specifications if required by the design.

Selection Notes

Select this component when designing for automotive environments requiring AEC-Q101 qualification and PPAP capability. Consider the low on-resistance and fast switching speed for efficient power management. Verify that the thermal resistance and power dissipation limits align with the PCB layout and operating conditions.

Part Context

This part belongs to the DMN3032LQ series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is specifically engineered to meet stringent automotive industry standards, ensuring reliability and performance in demanding electronic systems.