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Product Detailed Parameters
- Description：MOSFET N-CH 30V 6.9A SOT-26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：6.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：33mOhm @ 6.9A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：755 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-26
- Package / Case：SOT-23-6
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Overview
The DMN3033LDM-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in an SOT-26 surface-mount package. The device features a drain-source breakdown voltage of 30 V and supports a continuous drain current of 6.9 A at 25°C ambient temperature. Its static drain-source on-resistance is specified as 25 mΩ at VGS = 10V and ID = 6.9A, or 40 mΩ at VGS = 4.5V. Total gate charge is 13 nC under standard test conditions. The component operates within a junction temperature range of -55°C to +150°C with a maximum power dissipation of 2 W.
Feature Summary
- Low gate charge for efficient switching performance
- Low static drain-source on-resistance across varying gate voltages
- Qualified to AEC-Q101 standards for high reliability applications
- RoHS compliant construction without purposefully added lead
Applications
- Automotive electronic systems requiring high reliability components
- General-purpose power switching circuits
- Load management applications in consumer electronics
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging configuration containing 3000 units per reel. Confirm that the required RoHS compliance and 'Green' device status align with project environmental regulations. Ensure the SOT-26 footprint matches the PCB layout design specifications before finalizing procurement orders.
Selection Notes
Select this component when a single N-channel MOSFET with a 30 V rating and low on-resistance is required. The SOT-26 package provides a compact solution for space-constrained designs. Consider the thermal resistance characteristics and power dissipation limits relative to the expected operating ambient temperature and board copper area availability.
Part Context
This part belongs to the DMN3033 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series offers various package options including SC-59-3 and DFN configurations. The DMN3033LDM variant specifically utilizes the SOT-26 case style, providing distinct thermal and electrical characteristics compared to other members of the family.
Replacement Considerations
Consult official manufacturer documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before substituting.
