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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 6.9A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6.9A
- Rds On (Max) @ Id, Vgs：20mOhm @ 6.9A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：725pF @ 15V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The DMN3033LSD-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V(BR)DSS) of 30 V and a continuous drain current (ID) of 6.9 A at +25°C. The device exhibits a low on-state resistance (RDS(ON)) of 20 mΩ at VGS = 10 V and 27 mΩ at VGS = 4.5 V. Total gate charge (Qg) is 13 nC at VGS = 10 V. It operates within a temperature range of -55°C to +150°C, dissipates up to 2 W of power, and utilizes an SO-8 surface-mount package.
Feature Summary
- Dual N-channel configuration for compact circuit design
- Low on-resistance optimized for high efficiency power management
- Qualified to AEC-Q101 standards for automotive reliability
- Totally lead-free and fully RoHS compliant
Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify the component against the official Diodes Incorporated datasheet DS31262 Rev. 9-2. Confirm that the marking code matches N3033LD and the date code format aligns with Shanghai or Chengdu assembly sites. Ensure the ordering suffix corresponds to the specified tape and reel packaging quantity.
Selection Notes
Select this component when a dual N-channel topology is required in an SO-8 package. The 30 V rating and 6.9 A current capacity suit low-voltage applications. Evaluate thermal performance based on the 62.5 °C/W junction-to-ambient resistance value under standard PCB mounting conditions.
Part Context
This part belongs to the DMN3033 series of dual N-channel MOSFETs from Diodes Incorporated. It shares the same electrical specifications as the DMN3033LDM-7 but differs in package type, utilizing an SO-8 case instead of SOT-26-6. Both devices target similar high-efficiency power management applications.
Replacement Considerations
The DMN3033LDM-7 serves as a functional alternative within the same series, offering identical electrical characteristics but packaged in SOT-26-6. Verify pinout compatibility and physical footprint constraints before substitution.
