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Product Detailed Parameters
- Description：MOSFET N-CH 30V 6A SC59-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：30mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.5 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：755 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.4W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SC-59-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMN3033LSN-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a SC-59 (SC-88A) surface-mount package and operates with a drain-source voltage of 30V and a continuous drain current of 6A at +25°C. The device exhibits a maximum on-resistance of 40mΩ at VGS=4.5V and 30mΩ at VGS=10V, with a total gate charge of 10.5nC. Thermal characteristics include a power dissipation of 1.4W and a junction-to-ambient thermal resistance of 90°C/W. It supports an operating temperature range from -55°C to +150°C.
Feature Summary
- Low gate charge for efficient switching performance
- Low static drain-source on-resistance across standard gate voltages
- Qualified to AEC-Q101 standards for automotive reliability
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Applications
- Automotive electronic systems requiring high reliability components
- General-purpose low-side switching applications
- Power management circuits in portable devices
- Battery protection and load switch designs
Procurement Notes
Verify the component authenticity through authorized Diodes Incorporated distributors or certified supply chain partners. Confirm that the received parts match the specific ordering code DMN3033LSN-7 and the SC-59 package type. Ensure compliance with environmental directives such as RoHS 2 and check for any specific lot traceability requirements mandated by your manufacturing quality standards before integration into production lines.
Selection Notes
Select this component when a compact single N-channel MOSFET with low RDS(ON) is required for space-constrained designs. The SC-59 package offers a small footprint suitable for dense PCB layouts. Consider the 30V rating and 6A current capability against your circuit's peak and continuous load requirements. Verify that the gate drive voltage aligns with the specified thresholds for optimal conduction and switching efficiency.
Part Context
This part belongs to the DMN3033 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series includes various packages such as SOT-23 and dual configurations like the DMN3033LSDQ-13. The DMN3033LSN-7 specifically utilizes the SC-59 case style, distinguishing it from other series members by its physical dimensions and pin configuration while maintaining similar electrical performance parameters.
Replacement Considerations
Direct replacements must match the 30V VDS, 6A ID, and SC-59 package. Verify equivalent RDS(ON) and Qg values to ensure circuit compatibility. Check if alternative manufacturers offer pin-compatible options with identical thermal and electrical ratings.
