DMN3035LWN-13

$0.13

Description：MOSFET 2N-CH 5.5A 8VDFN
Series：-

SKU:c699334a93ee Category: FET, MOSFET Arrays Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 5.5A 8VDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：5.5A (Ta)
Rds On (Max) @ Id, Vgs：35mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：399pF @ 15V
Power - Max：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：V-DFN3020-8
Grade：-
Qualification：-

Download product information

DMN3035LWN-13

Overview

The DMN3035LWN-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a V-DFN3020-8 (Type N) case with a drain-source voltage (BVDSS) of 30V and a gate-source voltage (VGSS) rating of ±20V. The device provides a maximum continuous drain current (ID) of 5.5A at +25°C, reducing to 4.4A at +70°C. Static drain-source on-resistance (RDS(ON)) is specified as 35mΩ max at VGS=10V/ID=4.8A, and 45mΩ max at VGS=4.5V/ID=4.3A. Total gate charge (Qg) is 9.9nC at VGS=10V. Thermal resistance junction-to-ambient is 162°C/W steady state. Operating temperature range spans -55°C to +150°C.

Feature Summary

Dual N-channel configuration in a compact V-DFN3020-8 package
Low on-state resistance for high-efficiency power management
Fast switching speed with low input capacitance
Qualified to AEC-Q101 standards for high reliability

Applications

DC Motor Control
DC-AC Inverters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format when sourcing components. Confirm that the V-DFN3020-8 (Type N) mechanical dimensions align with the target PCB footprint requirements. Ensure compliance with RoHS 2 and halogen-free specifications if required by the end application. Cross-reference the datasheet revision number to confirm electrical characteristics have not been updated.

Selection Notes

Select this component for applications requiring dual N-channel isolation within a small surface-mount footprint. Evaluate thermal performance based on the 162°C/W junction-to-ambient resistance for steady-state conditions. Consider the 30V breakdown voltage limit for low-voltage power systems. Verify that the gate drive voltage meets the minimum threshold for optimal RDS(ON) performance at the intended load current.

Part Context

This part belongs to the DMN3035L series of dual N-channel MOSFETs from Diodes Incorporated. The 'W' indicates the V-DFN3020-8 (Type N) package, while the '-13' suffix designates the 10,000-piece tape and reel quantity. It serves as a dual-channel alternative to single-channel devices, offering space savings in multi-phase or bridge circuit designs.