DMN3042L-7

$0.25

Description：MOSFET N-CH 30V 5.8A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3e692f45f627 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 5.8A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：26.5mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id：1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：860 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：720mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN3042L-7

Overview

The DMN3042L-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 30V and a continuous drain current of 5.8A at 25°C. The device offers a typical on-resistance of 26.5mΩ at VGS=10V and 32mΩ at VGS=4.5V. Total gate charge is typically 13.3nC at VGS=10V. Power dissipation reaches 1.4W with a thermal resistance of 93°C/W under specific mounting conditions. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Low on-state resistance for high-efficiency power management
Fast switching speed with low input capacitance
Totally lead-free and fully RoHS compliant
Halogen and antimony free green device

Applications

Battery charging
Power management functions
DC-DC converters
Portable power adaptors

Procurement Notes

Verify the exact ordering suffix matches the required packing quantity, as the DMN3042L-7 specifies a 3,000-unit tape and reel carrier. Confirm that the standard SOT23 package aligns with the target PCB footprint. Ensure compliance with moisture sensitivity level 1 requirements during storage and handling procedures.

Selection Notes

Select this component when a single N-channel MOSFET with 30V rating and low RDS(on) is required. Consider the 5.8A continuous current limit and 1.4W power dissipation capability relative to the thermal environment. Evaluate the 12V maximum gate-source voltage against the driving circuit capabilities.

Part Context

This part belongs to the DMN3042 series of N-channel enhancement mode MOSFETs. It utilizes a standard SOT23 surface-mount package. The product is designed to minimize on-state resistance while maintaining superior switching performance for portable electronics applications.

Replacement Considerations

DMN3042L-13 serves as a direct substitute within the same series, differing only in the packing quantity (10,000 units per tape and reel). Both share identical electrical characteristics and physical package dimensions.