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Product Detailed Parameters
- Description：MOSFET N-CH 30V 5.2A SOT23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：5.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：35mOhm @ 5.2A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：390 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.4W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMN3050S-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated, housed in a SOT-23 surface-mount package. It features a drain-source voltage (VDSS) of 30V and a continuous drain current (ID) of 5.2A at 25°C ambient temperature. The device exhibits low on-resistance, specified as 35mΩ at VGS=10V and 50mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage range of 1V to 3V, input capacitance of 390pF, and total power dissipation of 1.4W. It operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Low on-resistance for efficient conduction
- Fast switching speed capabilities
- Qualified to AEC-Q 101 standards for high reliability
- RoHS compliant and lead-free design
Applications
- Power management circuits
- Load switching applications
- DC-DC converter designs
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance requirements and AEC-Q 101 qualification standards if automotive or high-reliability application criteria are mandatory. Ensure the SOT-23 package dimensions align with the target PCB footprint layout.
Selection Notes
Select this component when a compact N-channel MOSFET with low RDS(on) is required for 30V systems. Consider the thermal resistance of 90°C/W and the 1.4W power dissipation limit for heat management. Evaluate the gate threshold voltage characteristics against the driving logic levels to ensure reliable turn-on at both 4.5V and 10V gate drive conditions.
Part Context
This part belongs to the DMN3050 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is designed for general-purpose switching applications requiring low static and dynamic losses. The device is marketed as a 'Green' product with molded plastic compound casing.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-reference pinouts, voltage ratings, and package dimensions before substitution.
