DMN3053L-13

$0.09

Description：MOSFET N-CH 30V 4A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:3afc5e4f3df0 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 4A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：45mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17.2 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：676 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：760mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN3053L-13

Overview

The DMN3053L-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT-23 package. It features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 4.0 A at +25°C. The device exhibits a maximum on-resistance (Rds(on)) of 45 mΩ at Vgs = 10V and 50 mΩ at Vgs = 4.5V. Total gate charge (Qg) is 7.3 nC at Vgs = 4.5V and 17.2 nC at Vgs = 10V. Input capacitance (Ciss) is 676 pF, with a gate threshold voltage (Vgs(th)) range of 0.6 V to 1.4 V. Power dissipation is rated at 0.76 W at +25°C, operating within a junction temperature range of -55°C to +150°C.

Feature Summary

Low on-state resistance for high efficiency power management
Fast switching speed with low input capacitance
ESD protected gate structure
Qualified to AEC-Q101 standards for automotive reliability

Applications

Load Switch
DC-DC Converters
Power management functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance and halogen-free requirements as specified in the manufacturer's documentation. Ensure the selected variant matches the required thermal and electrical characteristics for the intended application environment.

Selection Notes

Select this component when a compact N-channel MOSFET with low Rds(on) and fast switching capabilities is required. The SOT-23 package suits space-constrained designs. Verify that the 30V breakdown voltage and 4.0A continuous current ratings align with the circuit's operational limits and thermal constraints under steady-state conditions.

Part Context

This part belongs to the DMN3053L series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series is designed to minimize on-state resistance while maintaining superior switching performance. The DMN3053L-13 specifically denotes the version packaged in a 10,000-unit tape and reel format for automated assembly processes.