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Product Detailed Parameters
- Description：MOSFET 2N-CH 5A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：5A (Ta)
- Rds On (Max) @ Id, Vgs：40mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：458pF @ 15V
- Power - Max：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：U-DFN2020-6 (Type B)
- Grade：-
- Qualification：-
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Overview
The DMN3055LFDB-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 package with a drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 5.0A at +25°C. The maximum on-resistance (RDS(ON)) is 40mΩ at VGS=4.5V and 75mΩ at VGS=2.5V. Total gate charge (Qg) is 11.2nC at VGS=10V. Operating temperature ranges from -55°C to +150°C, with total power dissipation up to 1.36W.
Feature Summary
- Dual N-channel configuration in a compact U-DFN2020-6 package
- Low on-state resistance for high efficiency power management
- Fast switching speed with low input capacitance
- Totally lead-free and fully RoHS compliant
Applications
- Battery charging systems
- Power management functions
- DC-DC converters
- Portable power adaptors
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format as defined in the manufacturer's documentation. Confirm that the component meets all relevant environmental compliance standards required for the intended application before finalizing procurement orders.
Selection Notes
Select this component for applications requiring dual N-channel MOSFETs with low on-resistance and fast switching capabilities. Ensure the operating conditions remain within the specified 30V drain-source voltage and 5.0A continuous drain current limits. Consider thermal management requirements given the U-DFN2020-6 package size and power dissipation characteristics.
Part Context
This part belongs to Diodes Incorporated's DMN series of dual N-channel enhancement mode MOSFETs. It is designed to minimize on-state resistance while maintaining superior switching performance. The device is suitable for high-efficiency power management applications where space constraints and thermal performance are critical design factors.
Replacement Considerations
Check for direct replacements within the same product family or similar packages. Verify pinout compatibility and electrical parameter equivalence before substitution.
FAQ
What is the maximum gate-source voltage rating?
The maximum gate-source voltage (VGSS) is ±12V.
Is the device suitable for automotive applications?
For automotive applications requiring specific change control, parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities, contact Diodes Incorporated directly.
What is the typical turn-on delay time?
The typical turn-on delay time (tD(ON)) is 1.8ns under standard test conditions.
