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The DMN3060LVT-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30 V drain-source breakdown voltage and supports a continuous drain current of 3.6 A. The device exhibits a maximum on-resistance of 60 mOhms at specified gate drive conditions. It operates within a temperature range of -55°C to +150°C and dissipates up to 830 mW of power. Packaged in a TSOT-26-6 surface-mount configuration, the component utilizes silicon technology for reliable performance in compact electronic designs.
This component belongs to the DMN3060 series of dual N-channel MOSFETs from Diodes Incorporated. The series is characterized by low on-resistance and high current capability in small surface-mount packages. The DMN3060LVT-7 specifically utilizes the TSOT-26-6 package, distinguishing it from single-channel variants or those in different form factors within the same electrical family.
Verify pin compatibility and package dimensions when substituting. The DMN3060LQ-7 offers similar electrical characteristics but uses an SOT-23 package. Ensure the replacement part meets the required 30V rating and 3.6A current capacity for the specific application.