DMN3060LW-13

$0.05

Description：MOSFET BVDSS: 25V~30V SOT323 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:46229f73394e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V SOT323 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：60mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id：1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：5.6 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：395 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

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DMN3060LW-13

Overview

The DMN3060LW-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source voltage rating and a maximum on-resistance of 60mΩ at VGS=10V. The device supports a continuous drain current of 2.6A at +25°C and operates within a temperature range of -55°C to +150°C. Packaged in SOT-323, it offers low input capacitance and fast switching speeds for efficient power management.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance
Totally lead-free and fully RoHS compliant with halogen and antimony free construction
Utilizes molded plastic green molding compound with UL flammability classification rating 94V-0

Applications

General purpose interfacing switch
Power management functions
DC-DC converters
Analog switch

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000 units per tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets all applicable environmental directives including RoHS 2 and RoHS 3 requirements before finalizing procurement specifications.

Selection Notes

Select this component when a compact single-channel solution is required for low-voltage applications. The SOT-323 package provides space efficiency suitable for dense circuit board layouts. Ensure the gate drive voltage aligns with the specified thresholds to achieve optimal conduction characteristics and thermal performance under load conditions.

Part Context

This part belongs to the DMN3060LW series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series is engineered for high-efficiency power management tasks where minimizing conduction losses is critical. The standard product line includes variations in packaging quantities to accommodate different manufacturing scales.