DMN3061LCA3-7

$0.11

Description：MOSFET BVDSS: 25V~30V X4-DSN1006
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:09c5ae219559 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V X4-DSN1006
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 8V
Rds On (Max) @ Id, Vgs：58mOhm @ 500mA, 8V
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.4 nC @ 4.5 V
Vgs (Max)：12V
Input Capacitance (Ciss) (Max) @ Vds：126 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.12W
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X4-DSN1006-3 (Type C)
Package / Case：3-XFDFN

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DMN3061LCA3-7

Overview

The DMN3061LCA3-7 is an N-channel enhancement mode MOSFET designed for minimal footprint in handheld and mobile applications. It features a drain-source voltage (BVDSS) of 30V and a maximum on-resistance (RDS(ON)) of 58mΩ at VGS=8V with a continuous drain current of 4.6A, or 62mΩ at VGS=4.5V with 4.4A. The device operates within a junction temperature range of -55°C to +150°C and utilizes an X4-DSN1006-3 package.

Feature Summary

Low gate charge (Qg) and gate-drain charge (Qgd) for efficient switching
Small physical footprint suitable for space-constrained designs
Low profile height of 0.20mm
Totally lead-free and fully RoHS compliant

Applications

Battery management systems
Load switches
Battery protections
Handheld and mobile applications

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets the required environmental standards, specifically ensuring compliance with EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2), and 2015/863/EU (RoHS 3). Check for Halogen and Antimony-free status if required by your manufacturing specifications.

Selection Notes

Select this component when a small form factor is critical for portable electronics. Ensure the driving circuit can provide sufficient gate voltage to achieve the desired RDS(ON) performance, as resistance varies significantly between 4.5V and 8V drive levels. Consider the thermal resistance characteristics and power dissipation limits relative to the expected operating environment and PCB layout.

Part Context

This part belongs to Diodes Incorporated's generation of MOSFETs optimized for minimizing footprint in handheld and mobile applications. It serves as a replacement for many small-signal MOSFETs where real estate is limited. The product is manufactured in facilities certified under IATF 16949, though automotive qualification requires specific contact with the manufacturer.