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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 3.4A TSOT23-6
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.4A (Ta)
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：6.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：278pF @ 15V
- Power - Max：1.08W (Ta)
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-23-6
- Grade：-
- Qualification：-
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Overview
The DMN3061SVT-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 3.4 A. The device exhibits a maximum on-resistance (Rds(on)) of 200 mΩ and a typical gate charge (Qg) of 3.5 nC at the specified gate-source voltage. Power dissipation is rated at 1.08 W, with an operating temperature range spanning from -55°C to +150°C. The component utilizes a TSOT surface-mount package with six pins, measuring 2.9 mm in length and 0.9 mm in height.
Feature Summary
- Dual configuration integrating two independent N-channel enhancement mode transistors within a single compact package.
Applications
- Low-side switching applications requiring dual channel control.
Procurement Notes
Verify the specific suffix 'SVT-7' against official manufacturer documentation to confirm the exact tape-and-reel quantity and packaging specifications. Ensure that the TSOT-6 footprint matches the target PCB design constraints. Cross-reference the RoHS compliance status directly with the latest datasheet revision before finalizing procurement orders.
Selection Notes
Select this component when a dual N-channel topology is required for space-constrained designs. The 30 V rating suits low-voltage logic interfaces. Evaluate the 200 mΩ on-resistance against thermal management requirements for the expected load current. Confirm that the TSOT-6 package dimensions fit within the available board area compared to alternative single-channel solutions.
Part Context
This part belongs to the DMN3061 series of dual N-channel MOSFETs from Diodes Incorporated. The series provides integrated dual-channel functionality to reduce component count in circuit designs. The SVT-7 designation indicates the specific surface-mount TSOT-6 packaging variant intended for automated assembly processes.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical parameters with any potential alternatives before implementation.
