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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 3.4A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.4A (Ta)
- Rds On (Max) @ Id, Vgs：60mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：278pF @ 15V
- Power - Max：880mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMN3061SVTQ-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30 V drain-source breakdown voltage and a continuous drain current of 3.4 A. The device utilizes a TSOT-26-6 surface-mount package with a maximum power dissipation of 1.08 W. Key electrical characteristics include a maximum on-resistance of 200 mΩ, a gate charge of 3.5 nC, and an operating temperature range from -55°C to +150°C.
Feature Summary
- Dual configuration integrating two independent N-channel enhancement-mode transistors within a single compact package.
- TSOT-26-6 surface-mount housing designed for automated assembly and space-constrained circuit board layouts.
Applications
- Low-side switching in portable electronic devices
- Load management in battery-powered consumer electronics
- General-purpose signal switching in automotive infotainment systems
Procurement Notes
Verify the specific suffix against official manufacturer documentation to confirm pinout compatibility and thermal ratings. Confirm RoHS compliance status through the latest datasheet revision. Ensure the ordering code matches the required tape-and-reel quantity specifications for production integration.
Selection Notes
Select this component when a dual N-channel topology is required in a TSOT-26 footprint. Evaluate the 200 mΩ on-resistance against total power loss requirements at the target load current. Verify that the 3.4 A continuous current rating exceeds peak operational demands under worst-case thermal conditions.
Part Context
This part belongs to the DMN3061 series of dual MOSFETs from Diodes Incorporated. It shares the core die specifications with variants such as DMN3061SWQ-13 but differs in package type and potential qualification standards. The TSOT-26 form factor distinguishes it from smaller SOT-323 or larger SOIC alternatives within the same voltage class.
Replacement Considerations
Cross-reference with DMN3061SVT-7 for identical functional specifications in alternative packaging formats. Verify pin-to-pin compatibility before substituting with other dual N-channel TSOT-26 devices from different manufacturers.
