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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V SOT323 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：2.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：3.3V, 10V
- Rds On (Max) @ Id, Vgs：60mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.5 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：278 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：490mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The DMN3061SW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 2.7A at +25°C. The device offers a maximum on-resistance (RDS(ON)) of 60mΩ at VGS=10V and 100mΩ at VGS=4.5V. Packaged in an SOT-323 case, it operates within a temperature range of -55°C to +150°C with a total power dissipation of 0.49W.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.
- Totally lead-free and fully RoHS compliant, ensuring compliance with environmental directives.
- Constructed as a halogen and antimony free "Green" device.
Applications
- General purpose interfacing switch
- Power management functions
- DC-DC converters
- Analog switch
Procurement Notes
Verify the specific ordering suffix matches the required packaging quantity. Confirm that the component meets all applicable regulatory standards for the intended market. Ensure the selected package variant aligns with the PCB footprint design requirements before finalizing procurement orders.
Selection Notes
Select this component when low on-resistance and fast switching are critical for system efficiency. Evaluate thermal constraints carefully due to the small SOT-323 package size. Consider gate drive voltage levels to ensure optimal RDS(ON) performance across the operating temperature range.
Part Context
This part belongs to the DMN3061SW series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a compact SOT-323 surface-mount package suitable for space-constrained designs.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on similar electrical ratings or package types without explicit confirmation.
FAQ
What is the maximum gate-source voltage rating?
The maximum gate-source voltage (VGSS) is rated at ±20V.
Is this component qualified for automotive applications?
For automotive applications requiring AEC-Q100/101/200 qualification and PPAP capability, contact Diodes Incorporated directly as standard parts may not meet these specific controls.
