DMN3061SWQ-13

$0.32

Description：MOSFET BVDSS: 25V~30V SOT323 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:06526bc9158e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V SOT323 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：3.3V, 10V
Rds On (Max) @ Id, Vgs：60mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id：1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：3.5 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：278 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：490mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

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DMN3061SWQ-13

Overview

The DMN3061SWQ-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source voltage rating and a maximum continuous drain current of 2.7A at +25°C. The device offers a low on-state resistance of 60mΩ at VGS=10V and 100mΩ at VGS=4.5V. Packaged in a SOT-323 case, it operates within a temperature range of -55°C to +150°C.

Feature Summary

Totally lead-free and fully RoHS compliant with halogen and antimony free construction
Suitable for automotive applications requiring specific change control
AEC-Q101 qualified and PPAP capable
Manufactured in IATF 16949 certified facilities

Applications

General purpose interfacing switch
Power management functions
DC-DC converters
Analog switch

Procurement Notes

Verify the component matches the exact part number DMN3061SWQ-13 to ensure correct packaging quantity of 10,000 units per tape and reel. Confirm that the supplier provides traceability documentation required for AEC-Q101 qualified parts intended for automotive applications. Ensure compliance with IATF 16949 manufacturing standards as specified by the manufacturer.

Selection Notes

Select this component when a compact N-channel MOSFET with low on-resistance is required for high-efficiency power management. The SOT-323 package suits space-constrained designs. Consider the 30V breakdown voltage and 2.7A current capability for general switching tasks. Verify thermal requirements against the junction-to-ambient thermal resistance specifications provided in the datasheet.

Part Context

This part belongs to the DMN3061SWQ series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The suffix '-13' indicates the specific tape and reel packaging configuration containing 10,000 units. It is designed to minimize on-state resistance while maintaining superior switching performance for various electronic applications.

Replacement Considerations

Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-referencing should be performed based on electrical parameters and package dimensions to ensure compatibility.

FAQ

Is the DMN3061SWQ-13 suitable for automotive applications?

Yes, the DMN3061SWQ-13 is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.