ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V SOT323 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：2.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：3.3V, 10V
- Rds On (Max) @ Id, Vgs：60mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.5 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：278 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：490mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
Download product information
Overview
The DMN3061SWQ-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a SOT323 surface-mount package. It features a drain-source voltage rating of 30V and a continuous drain current of 2.7A at +25°C. The device exhibits a maximum on-resistance of 60mΩ at VGS=10V and 100mΩ at VGS=4.5V. Total gate charge is typically 3.5nC, with turn-on delay time of 5.7ns and fall time of 51ns. Operating temperature range spans from -55°C to +150°C.
Feature Summary
- Low on-resistance for high-efficiency power management
- Fast switching speed with low input capacitance
- Suitable for automotive applications requiring specific change control
- Totally lead-free and fully RoHS compliant
Applications
- General purpose interfacing switch
- Power management functions
- DC-DC converters
- Analog switch
Procurement Notes
Verify the ordering suffix matches the required reel quantity; the -7 suffix indicates 3,000 units per tape and reel. Confirm AEC-Q101 qualification and IATF 16949 manufacturing status if automotive compliance is required. Ensure the component meets halogen and antimony-free specifications as defined by the manufacturer's green product standards.
Selection Notes
Select this component when a compact SOT323 footprint is necessary for low-voltage switching applications. The 30V rating supports standard logic-level interfaces while maintaining low conduction losses. Evaluate thermal resistance requirements against the intended PCB copper area, as junction-to-ambient performance varies significantly based on substrate layout and copper thickness.
Part Context
This part belongs to the DMN3061SWQ family of N-channel enhancement mode MOSFETs designed by Diodes Incorporated. The series emphasizes minimized on-state resistance combined with superior switching performance. The DMN3061SWQ-7 variant specifically utilizes a 3,000-unit tape and reel packaging format suitable for automated surface-mount assembly processes.
Replacement Considerations
Cross-reference with other Diodes Incorporated SOT323 N-channel MOSFETs sharing identical pinouts and electrical ratings. Verify that any substitute maintains the same 30V breakdown voltage and comparable RDS(ON) characteristics to ensure circuit compatibility without redesign.
