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Product Detailed Parameters
- Description：MOSFET N-CH 30V 4A SOT323
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：52mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.7 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：465 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：770mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The DMN3065LW-13 is an N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 4A at +25°C ambient temperature. The device offers low on-resistance values of 52mΩ at VGS=10V, 65mΩ at VGS=4.5V, and 85mΩ at VGS=2.5V. Total gate charge is specified as 11.7nC at VGS=10V and 5.5nC at VGS=4.5V. Input capacitance is 465pF. The component operates within a junction temperature range of -55°C to +150°C and is housed in an SOT323 package.
Feature Summary
- Totally lead-free and fully RoHS compliant with halogen and antimony free green device construction
- Qualified to AEC-Q101 standards for high reliability automotive applications
- Low input/output leakage characteristics combined with fast switching speed capabilities
Applications
- DC-DC Converters
- Power Management Functions
- Battery Operated Systems
- Solid-State Relays
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10000-unit tape and reel packaging configuration when sourcing this component. Confirm that the manufacturer's documentation aligns with the required quality standards and environmental compliance specifications for your intended application before finalizing procurement decisions.
Selection Notes
Select this component for designs requiring a compact SOT323 footprint with moderate current handling capabilities up to 4A. Consider the low gate threshold voltage and low on-resistance characteristics for efficient power management in battery-operated systems. Ensure thermal dissipation requirements are met given the 770mW total power dissipation rating in the specified package.
Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is designed for surface mount applications. The device is specifically engineered to provide low on-resistance and fast switching performance within a small form factor suitable for portable electronics and power management circuits.
Replacement Considerations
The DMN3065LW-7 is a verified substitute offering identical electrical specifications but packaged in a 3000-unit tape and reel format instead of the 10000-unit configuration found in the -13 variant.
