DMN3066L-13

$0.07

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:9becea5c9c6c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：67mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4.1 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：353 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：810mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN3066L-13

Overview

The DMN3066L-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a SOT23 package. It features a drain-source voltage of 30V and a continuous drain current of 3.6A at +25°C. The maximum on-resistance is 67mΩ at VGS=4.5V, 70mΩ at VGS=4.0V, and 98mΩ at VGS=2.5V. Total gate charge is 4.1nC. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Low gate threshold voltage for efficient drive
Fast switching speed with minimized on-state resistance
ESD protected gate structure

Applications

Load Switch

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000 units per tape and reel packaging configuration. Confirm that the component meets RoHS compliance and halogen-free requirements as specified in the manufacturer's documentation before finalizing procurement orders.

Selection Notes

Select this component for high-efficiency power management applications requiring low on-state resistance and fast switching performance. Ensure the application operates within the 30V drain-source voltage limit and the -55°C to +150°C junction temperature range.

Part Context

This part belongs to the DMN3066L series of N-channel enhancement mode MOSFETs. It is designed to minimize on-state resistance while maintaining superior switching performance. The device utilizes silicon technology and is housed in a standard SOT23 surface-mount case.