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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V SOT23 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：67mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.1 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：353 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：810mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMN3066LQ-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 30V and a maximum continuous drain current (ID) of 3.6A at +25°C. The device offers a low on-state resistance (RDS(ON)) of 67mΩ at VGS = 4.5V and 98mΩ at VGS = 2.5V. Key electrical parameters include a gate-source voltage rating of ±12V, a total gate charge (Qg) of 4.1nC, and a turn-on delay time of 5.7ns. It operates within a temperature range of -55°C to +150°C and is housed in a SOT23 package.
Feature Summary
- Low gate threshold voltage for efficient drive requirements
- Fast switching speed with optimized dynamic characteristics
- ESD protected gate structure for enhanced reliability
- Totally lead-free and fully RoHS compliant construction
Applications
- Load Switch applications
- High efficiency power management circuits
- Automotive electronics requiring AEC-Q101 qualification
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets AEC-Q101 automotive qualification standards if required for the target application. Ensure compatibility with IATF 16949 certified manufacturing processes for automotive supply chains.
Selection Notes
Select this component when a 30V N-channel MOSFET with low RDS(ON) at reduced gate voltages is needed. The 3.6A continuous current rating suits moderate load switching tasks. Consider the SOT23 package constraints for thermal dissipation and board space limitations during integration.
Part Context
This part belongs to the DMN3066LQ series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The series targets high-efficiency power management solutions suitable for both general electronic and automotive environments.
Replacement Considerations
DMN3066LQ-13 serves as a direct substitute with identical electrical specifications but utilizes 10,000-unit tape and reel packaging instead of the 3,000-unit variant.
