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Product Detailed Parameters
- Description：MOSFET N-CH 30V 2.6A SOT-323
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：67mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.6 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：447 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The DMN3067LW-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 30V and a continuous drain current of 2.6A at +25°C. The device exhibits a typical on-resistance of 67mΩ at VGS=4.5V and 98mΩ at VGS=2.5V. Key electrical parameters include a gate threshold voltage of 1.5V, total gate charge of 4.6nC, input capacitance of 447pF, and turn-off fall time of 6.1ns. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Low on-state resistance for high efficiency power management
- Fast switching speed with low input capacitance
- ESD protected gate structure
- Qualified to AEC-Q101 standards for automotive reliability
Applications
- Switching applications
- Power management functions
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the component meets required environmental compliance standards such as RoHS and halogen-free definitions. Ensure the selected package variant matches the intended surface mount layout requirements for the target PCB design.
Selection Notes
Select this component for designs requiring a compact SOT323 footprint with robust switching performance. Consider the thermal characteristics and power dissipation limits when determining heat sinking or copper pad requirements. Evaluate the gate drive voltage levels to ensure optimal on-resistance performance relative to the application's operating conditions.
Part Context
This part belongs to the DMN3067LW series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes a small surface mount SOT323 case designed for automated assembly processes. The device is constructed using silicon technology and is intended for general-purpose switching and power control tasks in consumer and industrial electronics.
Replacement Considerations
Consult official manufacturer substitution guides for verified alternatives. Verify pinout compatibility and electrical parameter equivalence before implementation.
