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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 4A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Rds On (Max) @ Id, Vgs：50mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：190pF @ 15V
- Power - Max：700mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：-
- Qualification：-
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Overview
The DMN3071LVT-13 is a single-channel N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source breakdown voltage (Vds) of 30 V and a continuous drain current (Id) of 4 A. The device exhibits a maximum on-resistance (Rds(on)) of 50 mOhms at a gate-source voltage (Vgs) of 10 V, with a gate threshold voltage (Vgs(th)) of 2.5 V. Total gate charge (Qg) is specified at 4.5 nC. Power dissipation reaches 1 W under standard conditions. Operating temperatures range from -55 °C to +150 °C. The component utilizes a TSOT26 surface-mount package configuration.
Feature Summary
- Low on-resistance design for efficient power switching
- Enhancement mode operation with defined threshold characteristics
- High thermal stability across extended temperature ranges
Applications
- DC-DC converter output stages
- Load switching circuits
- Power management modules
Procurement Notes
Verify the specific ordering suffix against manufacturer documentation to confirm reel quantity and tape specifications. Confirm RoHS compliance status through official datasheets prior to integration. Ensure ESD handling protocols are followed during assembly. Cross-reference pinout diagrams with PCB footprint requirements to prevent installation errors. Validate thermal performance calculations based on actual board layout conditions.
Selection Notes
Select this component when a 30 V N-channel switch with low conduction losses is required in compact designs. Compare Rds(on) values against alternative packages for thermal efficiency. Evaluate gate charge requirements relative to driver capabilities. Consider the TSOT26 form factor for space-constrained applications. Verify operating temperature limits match environmental constraints.
Part Context
This part belongs to the Diodes Incorporated LVT series of low-voltage transistors. The series focuses on optimizing on-resistance within small surface-mount packages. Similar parts in the lineup may vary in channel count or current ratings while maintaining compatible voltage specifications.
Replacement Considerations
Direct substitutes include the DMN3071LVT-7 variant, which shares identical electrical parameters but differs in packaging quantity. Verify pin compatibility and thermal characteristics before substitution.
