ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 4A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Rds On (Max) @ Id, Vgs：50mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：190pF @ 15V
- Power - Max：700mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：-
- Qualification：-
Download product information
Overview
The DMN3071LVT-7 is a single N-channel enhancement-mode MOSFET manufactured by Diodes Incorporated. It features a 30 V drain-source voltage rating and supports a continuous drain current of 4 A. The device exhibits a maximum on-resistance of 50 mOhms at a gate-source voltage of 10 V, with a typical gate charge of 4.5 nC. Packaged in a TSOT26 surface-mount format, it operates within a temperature range of -55°C to +150°C junction temperature and has a power dissipation capacity of 1 W.
Feature Summary
- Single N-channel enhancement mode configuration
- Logic-level gate drive capability
- Low on-resistance for efficient conduction
- TSOT26 surface-mount packaging
Applications
- DC-DC converter output stages
- Load switching applications
- Power management circuits
Procurement Notes
Verify the specific ordering suffix and package variant against official Diodes Incorporated documentation before procurement. Confirm that the component meets all required electrical specifications for the target application environment. Ensure compliance with relevant industry standards and certifications as listed in the manufacturer's datasheet.
Selection Notes
Select this component when a single N-channel MOSFET with a 30 V rating and 4 A current capacity is required. Consider the 50 mOhm on-resistance and 4.5 nC gate charge for efficiency and switching speed requirements. Verify compatibility with the TSOT26 footprint and operating temperature range during circuit design.
Part Context
This part belongs to the DMN series of N-channel MOSFETs from Diodes Incorporated. It is designed for general-purpose switching applications requiring low on-resistance and compact packaging. The TSOT26 package provides a small form factor suitable for space-constrained designs.
Replacement Considerations
Consult official substitution guides for verified alternatives. Ensure any replacement matches the 30 V rating, 4 A current, and TSOT26 package dimensions.
