DMN3110SQ-7

$0.43

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e4fbd34d1e2d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：73mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：305.8 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：740mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN3110SQ-7

Overview

The DMN3110SQ is an N-channel enhancement mode MOSFET designed for automotive applications. It features a drain-source voltage of 30V and a maximum continuous drain current of 3.3A at 25°C. The device offers a low on-resistance of 73mΩ at VGS=10V and 110mΩ at VGS=4.5V. It operates within a temperature range of -55°C to +150°C, with a total power dissipation of 0.74W in steady state.

Feature Summary

Qualified to AEC-Q101 standards for high reliability
PPAP capable for automotive supply chain requirements
Totally lead-free and fully RoHS compliant
Halogen and antimony free green device

Applications

General purpose interfacing switch
Power management functions
Boost application
Analog switch

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets the necessary automotive qualification standards for your intended design. Ensure compliance with environmental directives such as RoHS and REACH before finalizing procurement decisions.

Selection Notes

Select this component when a robust N-channel MOSFET is required for automotive environments. Consider the 30V breakdown voltage and low on-resistance characteristics for efficient switching. Evaluate thermal performance based on the specified junction-to-ambient resistance values under your expected load conditions.

Part Context

This part belongs to the DMN31 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes a SOT23 surface-mount package suitable for automated assembly processes. The device is specifically engineered to meet stringent automotive industry reliability and quality standards.