DMN3112SQ-7

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:88cfe8c2dd72 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：57mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：268 pF @ 5 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN3112SQ-7

Overview

The DMN3112SQ-7 is an N-channel enhancement mode MOSFET designed for high-efficiency power management. It features a drain-source voltage (V_DSS) of 30 V and a continuous drain current (I_D) of 5.8 A at +25°C. The maximum on-state resistance (R_DS(ON)) is 57 mΩ at V_GS = 10 V and 112 mΩ at V_GS = 4.5 V. The device operates within a temperature range of -55°C to +150°C, with a total power dissipation of 1.4 W in a SOT-23 package.

Feature Summary

Low on-resistance design minimizes conduction losses while maintaining superior switching performance.
AEC-Q101 qualified and PPAP capable for automotive applications requiring specific change control.
Totally lead-free, fully RoHS compliant, and halogen and antimony free.
Fast switching speed combined with low input/output leakage characteristics.

Applications

General purpose interfacing switch
Power management functions
Boost application
Analog switch

Procurement Notes

Verify the component matches the exact Diodes Incorporated part number DMN3112SQ-7. Confirm the package type is SOT-23 and that it meets automotive qualification standards if required by your design specifications. Ensure the ordering suffix corresponds to the correct tape and reel packaging quantity before finalizing procurement orders.

Selection Notes

Select this component when a 30 V N-channel MOSFET with low R_DS(ON) is needed for efficient power switching. Consider the 5.8 A continuous current rating and 1.4 W power dissipation capabilities relative to your thermal management strategy. Verify gate drive voltages align with the specified thresholds for optimal on-state resistance performance.

Part Context

This component belongs to the DMN series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. These devices are engineered to balance low on-state resistance with fast switching speeds, targeting modern power management requirements. The product line includes various voltage and current ratings housed in compact surface-mount packages.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

Is the DMN3112SQ suitable for automotive applications?

Yes, the DMN3112SQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.