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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 1A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：1A
- Rds On (Max) @ Id, Vgs：190mOhm @ 1.3A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：87pF @ 20V
- Power - Max：320mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The DMN3190LDW-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and operates within a junction temperature range of -55°C to +150°C. The device provides a continuous drain current (ID) of 1A at 25°C, with a maximum static drain-source on-resistance (RDS(ON)) of 190mΩ at VGS=10V and 335mΩ at VGS=4.5V. Total power dissipation is rated at 0.32W in steady state. The component utilizes a SOT363 surface-mount package.
Feature Summary
- Dual N-channel configuration designed for high efficiency power management applications
- Optimized low on-state resistance combined with superior switching performance
- Integrated ESD protection on the gate terminal
Applications
- Motor Control
- Power Management Functions
- Load Switch
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity. The -13 suffix corresponds to tape and reel packaging containing 10,000 units per reel. Confirm RoHS compliance status and lead-free specifications directly from the manufacturer's datasheet before finalizing procurement orders.
Selection Notes
Select this component for circuits requiring a 30V breakdown voltage and dual N-channel logic-level control. Ensure the application gate drive voltage supports the specified RDS(ON) thresholds at 10V or 4.5V. Verify that the thermal design accommodates the 0.32W power dissipation limit in the SOT363 package under expected operating conditions.
Part Context
This part belongs to the DMN series of dual N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It shares the SOT363 mechanical footprint with other devices in the family but differs in electrical ratings such as breakdown voltage and on-resistance. The product is intended for general-purpose switching and load management tasks.
Replacement Considerations
Consult the official Diodes Incorporated datasheet for verified substitute part numbers. Cross-referencing requires matching the SOT363 package, 30V BVDSS rating, and dual N-channel configuration to ensure functional compatibility without circuit modification.
