DMN3190LDWQ-7

$0.07

Description：MOSFET 2N-CH 30V 1A SOT363
Series：-

SKU:ddef31d557d3 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 1A SOT363
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：1A (Ta)
Rds On (Max) @ Id, Vgs：190mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id：2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：87pF @ 20V
Power - Max：320mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：Automotive
Qualification：AEC-Q101

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DMN3190LDWQ-7

Overview

The DMN3190LDWQ-7 is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features a drain-source voltage (BVDSS) of 30V and a gate-source voltage (VGSS) of ±20V. The device offers a maximum on-resistance (RDS(ON)) of 190mΩ at VGS=10V and 335mΩ at VGS=4.5V. Continuous drain current reaches 1A at +25°C, with a total power dissipation of 0.32W in steady state. Packaged in an SOT363 case, it operates within a temperature range of -55°C to +150°C.

Feature Summary

Qualified to AEC-Q101 standards for high reliability
PPAP capable for automotive supply chain requirements
Totally lead-free and fully RoHS compliant
Halogen and antimony free green device

Applications

Motor Control
DC-DC Converters
Load Switch

Procurement Notes

Verify the specific ordering suffix against official Diodes Incorporated documentation before procurement. Confirm that the component meets all required automotive qualification standards, including AEC-Q101 compliance and PPAP capability, as these are critical for the intended application environment.

Selection Notes

Select this component when a dual N-channel configuration is required in a compact SOT363 package. Ensure the design accommodates the specified thermal resistance values and power dissipation limits under expected operating temperatures. Verify that the gate drive voltage aligns with the RDS(ON) performance characteristics provided in the datasheet.

Part Context

This part belongs to the DMN series of dual N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The product line targets automotive electronics requiring robust performance and strict quality control. The DMN3190LDWQ variant specifically addresses low-voltage switching needs within the broader portfolio.

Replacement Considerations

Consult the manufacturer's datasheet for officially confirmed substitute part numbers. Do not assume cross-compatibility with other dual MOSFET packages without verifying pinout alignment and electrical parameter equivalence.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.