DMN31D5UDJ-7

Overview

The DMN31D5UDJ-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 220mA at +25°C. The device offers a maximum static drain-source on-resistance (RDS(ON)) of 1.5Ω at VGS = 4.5V, 2.0Ω at VGS = 2.5V, and 3.0Ω at VGS = 1.8V. Total gate charge (Qg) is typically 0.38nC. It operates within a temperature range of -55°C to +150°C with a total power dissipation of 350mW.

Feature Summary

• Ultra-small surface mount package measuring 1mm x 1mm
• Low on-state resistance for high efficiency power management
• Very low gate threshold voltage with a maximum of 1.0V
• ESD protected gate structure

Applications

• General purpose interfacing switch
• Power management functions
• Analog switch

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 10k tape and reel packaging configuration. Confirm that the SOT963 case material meets RoHS and halogen-free requirements as specified in the manufacturer's documentation. Ensure compatibility with standard surface mount assembly processes.

Selection Notes

Select this component when a compact dual N-channel MOSFET is required for low-voltage applications. The 1.5Ω RDS(ON) specification supports efficient switching at moderate currents. Verify that the 30V breakdown voltage aligns with the circuit's maximum operating conditions.

Part Context

This part belongs to the DMN series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the SOT963 package, which provides an ultra-small footprint suitable for space-constrained designs. The series is designed to minimize on-state resistance while maintaining fast switching performance.

Replacement Considerations

Check datasheets for alternative dual N-channel MOSFETs in the SOT963 package. Verify matching BVDSS, ID, and RDS(ON) specifications. Ensure pinout compatibility and thermal characteristics are equivalent before substitution.