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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.5A 6DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
- Rds On (Max) @ Id, Vgs：1.5Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：50pC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：22.2pF @ 15V
- Power - Max：370mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-XFDFN Exposed Pad
- Supplier Device Package：X2-DFN1010-6 (Type UXC)
- Grade：-
- Qualification：-
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Overview
The DMN31D5UDR4-7R is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source breakdown voltage (BVDSS) of 30V and a continuous drain current (ID) of 220mA. The device exhibits a maximum on-resistance (RDS(on)) of 1.5 Ohms at a gate-source voltage of 4.5V. It operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 350mW. The component utilizes an SOT-963-6 surface-mount package, designed for compact circuit applications requiring dual switching capabilities.
Feature Summary
- Dual N-channel configuration in a single compact package
- Enhancement mode operation with low threshold voltage
- Surface-mount design optimized for automated assembly
Applications
- Low-voltage signal switching circuits
- Battery protection modules
- Load switching applications in portable devices
Procurement Notes
Verify the specific suffix DR4 against official Diodes Incorporated documentation to confirm tape-and-reel specifications and packaging dimensions. Ensure compatibility with existing PCB footprints designated for the SOT-963-6 package. Cross-reference the manufacturer's latest datasheet revision to validate electrical parameters before finalizing procurement orders.
Selection Notes
Select this component when a dual N-channel MOSFET is required for space-constrained designs. The 30V rating suits low-voltage systems, while the 1.5 Ohm RDS(on) balances conduction loss and cost. Verify that the 220mA current limit meets the load requirements and that the thermal management strategy accommodates the 350mW power dissipation in the intended enclosure.
Part Context
This part belongs to the DMN series of dual MOSFETs from Diodes Incorporated. The series provides integrated solutions for replacing discrete transistor pairs, reducing board space and assembly complexity. The specific model targets applications needing two independent N-channel switches within a minimal footprint.
Replacement Considerations
Direct replacements must match the SOT-963-6 package and 30V/220mA ratings. Verify pinout compatibility with the original design. Consult Diodes Incorporated for updated equivalent parts if the specific suffix is discontinued.
