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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.43A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：430mA (Ta)
- Rds On (Max) @ Id, Vgs：1.5Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：15.4pF @ 15V
- Power - Max：330mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The DMN31D5UDW-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a gate-source voltage (VGSS) rating of ±12V. The device offers low on-state resistance, with RDS(ON) values ranging from 1.5Ω at VGS=4.5V to 4.5Ω at VGS=1.5V. Continuous drain current (ID) reaches 0.43A at VGS=4.5V under steady-state conditions at +25°C. Total power dissipation is rated at 0.33W or 0.43W depending on the PCB copper area. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration in an ultra-small SOT363 surface-mount package
- Low on-resistance optimized for high-efficiency power management
- Fast switching speed with low input capacitance and gate charge
- ESD protected and fully RoHS compliant lead-free construction
Applications
- Battery-operated systems
- Solid-state relays
- Power supply converter circuits
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format. Confirm that the component meets all applicable environmental directives, including RoHS 3 and halogen-free requirements, before finalizing procurement specifications.
Selection Notes
Select this component when space constraints require a dual N-channel MOSFET in an SOT363 footprint. Ensure the application logic levels align with the specified RDS(ON) thresholds, particularly if operating below 4.5V gate drive. Evaluate thermal performance against the junction-to-ambient resistance limits provided in the datasheet.
Part Context
This part belongs to the DMN31 series of dual N-channel enhancement mode MOSFETs. It shares the same electrical characteristics as the DMN31D5UDW-7 variant, differing only in the standard manufacturing packing quantity. Both variants utilize the identical SOT363 package and silicon die design.
Replacement Considerations
The DMN31D5UDW-7 serves as a direct functional substitute with identical electrical parameters and pinout. Verify that the alternative packaging quantity meets production needs without altering board layout or assembly processes.
FAQ
What is the typical gate threshold voltage range?
The gate threshold voltage (VGS(TH)) typically ranges from 0.5V to 0.9V when tested at VDS = VGS and ID = 250μA.
How does the on-resistance vary with gate voltage?
RDS(ON) increases as gate voltage decreases. It is 1.5Ω max at 4.5V, 2.0Ω max at 2.5V, 3.0Ω max at 1.8V, and 4.5Ω max at 1.5V.
Is the internal body diode characterized?
Yes, the forward voltage (VSD) is typically 0.7V and maximally 1.0V when sourced at 100mA with the gate shorted to the source.
