ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 30V 220MA 3DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：220mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.2V, 4.5V
- Rds On (Max) @ Id, Vgs：1.5Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.35 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：22.2 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：393mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN0606-3
- Package / Case：3-XFDFN
Download product information
Overview
The DMN31D5UFZ-7B is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a compact X2-DFN0606-3 package. It features a drain-source breakdown voltage of 30V and a continuous drain current of 220mA at +25°C. The device offers low on-state resistance, specified as 1.5Ω maximum at VGS=4.5V and ID=100mA, with a gate threshold voltage up to 1.0V. Total gate charge is 0.35nC, supporting efficient switching. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Designed for high efficiency power management applications by minimizing on-state resistance while maintaining superior switching performance.
- Features a very low gate threshold voltage of 1.0V maximum, facilitating drive from low-voltage logic sources.
- Includes ESD protection on the gate terminal to enhance reliability during handling and operation.
- Constructed with a lead-free, fully RoHS compliant, and halogen/antimony free green molding compound.
Applications
- General purpose interfacing switch
- Power management functions
- Analog switch
Procurement Notes
Verify the specific ordering suffix '-7B' corresponds to the 10K/Tape & Reel packaging configuration when sourcing. Confirm that the component meets the required environmental standards, specifically RoHS 2 compliance and Halogen/Antimony-free definitions provided by the manufacturer. Ensure the application environment remains within the specified thermal and electrical limits outlined in the datasheet.
Selection Notes
Select this component for designs requiring a small footprint due to its 0.62mm x 0.62mm package dimensions. It is suitable for low-current switching tasks where a 30V rating and 220mA continuous current are sufficient. Consider the low gate threshold voltage if driving directly from low-voltage microcontrollers or logic gates without level shifting.
Part Context
This part belongs to the DMN31D5 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series focuses on providing low on-resistance in miniature packages for portable and space-constrained electronics. The DMN31D5UFZ variant specifically utilizes the X2-DFN0606-3 case style.
Replacement Considerations
Consult the manufacturer's cross-reference tools or datasheets for parametrically similar parts. Verify pinout compatibility and electrical ratings such as V(BR)DSS, RDS(ON), and package dimensions before substituting.
