DMN3200U-7

$0.41

Description：MOSFET N-CH 30V 2.2A SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c79e18193af5 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 2.2A SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：90mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：290 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：650mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN3200U-7

Overview

The DMN3200U-7 is an N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a drain-source voltage (VDSS) of 30 V and a continuous drain current (ID) of 2.2 A at +25°C ambient temperature. The device offers low on-resistance, specified as 90 mΩ maximum at VGS = 4.5V and ID = 2.2A. It operates within a junction temperature range of -55°C to +150°C and has a total power dissipation rating of 650 mW. The component is housed in a SOT-23 surface-mount package.

Feature Summary

Low on-resistance for efficient power switching
Fast switching speed capabilities
ESD protected gate structure
Qualified to AEC-Q101 standards for high reliability

Applications

Power management circuits
Load switches
DC-DC converter applications

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000 units per tape and reel packaging configuration. Confirm compliance with RoHS directives and Halogen-free requirements if environmental specifications are critical for the intended assembly process. Ensure the procurement channel is authorized to guarantee product authenticity and traceability.

Selection Notes

Select this component when a 30 V N-channel MOSFET with a 2.2 A continuous current rating is required. Consider the low on-resistance characteristics for minimizing conduction losses in low-voltage applications. Verify that the SOT-23 package dimensions fit the available PCB space and that the thermal resistance meets the system's heat dissipation requirements under expected operating conditions.

Part Context

This part belongs to the DMN3200 series of N-channel enhancement mode field effect transistors from Diodes Incorporated. The series is designed for general-purpose switching applications requiring low on-resistance and fast switching speeds. The DMN3200U-7 variant specifically utilizes the SOT-23 package and follows the manufacturer's standard tape and reel packaging format.

Replacement Considerations

Direct substitutes must match the 30 V VDSS, 2.2 A ID rating, and SOT-23 package. Verify pinout compatibility and electrical parameters such as RDS(ON) and threshold voltage before implementation.