DMN32D0LFB4-7B

$0.36

Description：MOSFET BVDSS: 25V-30V X2-DFN1006
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ac9e66b7ba8b Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V-30V X2-DFN1006
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：440mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 2.5V, 4.5V
Rds On (Max) @ Id, Vgs：1.2Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 4.5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：44.8 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：350mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN1006-3
Package / Case：3-XFDFN

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DMN32D0LFB4-7B

Overview

The DMN32D0LFB4-7B is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 30V and a maximum continuous drain current (I_D) of 440mA at +25°C ambient temperature. The device offers low on-state resistance, specified as 1.2Ω max at V_GS = 4.5V with I_D = 100mA, and 1.5Ω max at V_GS = 2.5V with I_D = 20mA. It utilizes an X2-DFN1006-3 surface mount package.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Features low gate threshold voltage and low input capacitance to support fast switching speeds.
Constructed in an ultra-small surface mount package that is totally lead-free, fully RoHS compliant, and halogen/antimony free.

Applications

Load Switch
High efficiency power management applications

Procurement Notes

Verify the specific ordering suffix '-7B' against the manufacturer's official documentation to confirm reel size, tape width, and quantity per reel specifications. Ensure compliance requirements such as RoHS 3 and REACH status are validated against the latest product data sheet before procurement. Confirm the package type matches the design layout requirements.

Selection Notes

Select this component for designs requiring a compact N-channel MOSFET with a 30V rating and low on-resistance characteristics. Consider the thermal resistance and power dissipation limits when determining heat sinking needs. Verify that the gate drive voltage levels align with the specified threshold and on-resistance test conditions for optimal performance.

Part Context

This part belongs to the DMN32D0LFB4 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series is characterized by its focus on minimizing on-state resistance and maintaining fast switching capabilities within small form factor packages suitable for modern portable and space-constrained electronic designs.

Replacement Considerations

Consult the manufacturer's official documentation for confirmed substitute part numbers. Do not assume cross-compatibility with other MOSFETs without verifying pinout, electrical ratings, and package dimensions against the original datasheet.