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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.68A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：680mA (Ta)
- Rds On (Max) @ Id, Vgs：1.2Ohm @ 100mA, 4V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.62nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：44.8pF @ 15V
- Power - Max：480mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The DMN32D0LV-7 is a dual N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 0.68A at +25°C. The device offers low on-state resistance, specified as 1.2Ω at VGS = 4.5V and 1.5Ω at VGS = 2.5V. It operates within a temperature range of -55°C to +150°C with a total power dissipation of 480mW. Packaged in an ultra-small SOT563 surface mount format, it includes fast switching speed and low input capacitance for efficient power management.
Feature Summary
- Dual N-channel configuration designed for high efficiency power management applications
- Ultra-small SOT563 surface mount package suitable for space-constrained designs
- Totally lead-free and fully RoHS compliant with halogen and antimony free construction
Applications
- High efficiency power management circuits
- Low voltage DC/DC converter modules
- Battery protection and load switch applications
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the component meets the required environmental standards, specifically RoHS 3 compliance and the absence of intentionally added lead. Ensure the sourcing channel provides valid traceability documentation for the manufacturing date code and lot number.
Selection Notes
Select this component when a compact dual N-channel MOSFET solution is required for low voltage switching tasks. Evaluate the thermal resistance characteristics against the expected ambient operating conditions to ensure junction temperatures remain within the specified limits during continuous operation.
Part Context
This part belongs to the DMN series of dual N-channel enhancement mode field effect transistors from Diodes Incorporated. It utilizes silicon technology and is housed in a molded plastic SOT563 package. The product is qualified to JEDEC standards for high reliability applications.
Replacement Considerations
For automotive applications requiring specific change control or AEC-Q qualification, consult the related automotive grade parts with the Q-suffix. Verify pinout compatibility and electrical parameters before substituting with other dual N-channel MOSFETs in the SOT563 package.
