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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.68A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：680mA (Ta)
- Rds On (Max) @ Id, Vgs：1.2Ohm @ 100mA, 4V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.62nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：44.8pF @ 15V
- Power - Max：480mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMN32D0LVQ-7 is a dual N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 0.68A at +25°C. The device exhibits low on-resistance, with RDS(ON) values of 1.2Ω at VGS = 4.5V and 1.5Ω at VGS = 2.5V. Total gate charge (Qg) is typically 0.62nC. It operates within a junction temperature range of -55°C to +150°C and is housed in an SOT563 package.
Feature Summary
- Dual N-channel configuration for space-efficient circuit designs
- Qualified for automotive applications under AEC-Q101 standards
- Low input capacitance and fast switching speed capabilities
- Totally lead-free and fully RoHS compliant construction
Applications
- High efficiency power management systems
- Automotive electronic modules requiring specific change control
- General purpose switching applications
Procurement Notes
Verify the component authenticity against the official datasheet specifications before integration. Confirm that the ordering suffix matches the required packing quantity, as the -7 suffix indicates a tape and reel carrier containing 3000 units. Ensure compliance with environmental directives such as RoHS 3 and halogen-free requirements during procurement planning.
Selection Notes
Select this component when a compact dual N-channel MOSFET solution is required for low-voltage switching. The SOT563 package provides a small footprint suitable for dense PCB layouts. Consider the low gate threshold voltage for compatibility with low-power logic drivers. Verify thermal dissipation requirements against the specified junction-to-ambient thermal resistance.
Part Context
This part belongs to the DMN32D0LVQ series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed specifically to meet stringent automotive industry requirements, supported by PPAP documentation. The product is manufactured in IATF16949 certified facilities, ensuring consistent quality for automotive-grade applications.
Replacement Considerations
No official substitute part numbers are documented in the provided source material. When evaluating alternatives, ensure the replacement maintains the same SOT563 pinout configuration and meets or exceeds the 30V BVDSS and 0.68A ID ratings. Verify that any cross-reference also holds AEC-Q101 qualification if used in automotive contexts.
