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Product Detailed Parameters
- Description：MOSFET N-CH 30V 300MA 3DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4V
- Rds On (Max) @ Id, Vgs：1.2Ohm @ 100mA, 4V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：39 pF @ 3 V
- FET Feature：-
- Power Dissipation (Max)：350mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN1006-3
- Package / Case：3-XFDFN
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Overview
The DMN32D2LFB4-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V(BR)DSS) of 30V and a gate-source voltage rating of ±10V. The device offers low on-state resistance, specified as 1.2Ω max at VGS=4V/ID=100mA, 1.5Ω max at VGS=2.5V/ID=20mA, and 2.2Ω max at VGS=1. very low gate threshold voltage with a maximum of 1.2V. Continuous drain current is rated at 300mA, with total power dissipation of 350mW at +25°C. It utilizes an X2-DFN1006-3 surface mount package.
Feature Summary
- Ultra-small surface mount package for space-constrained designs
- Low input capacitance and fast switching speed
- ESD protected gate structure
- Qualified to AEC-Q101 standards for high reliability
Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix when purchasing. The -7 suffix indicates a 3,000-unit reel size, while the -7B suffix corresponds to a 10,000-unit reel size. Confirm that the required quantity matches the available packaging options provided by the manufacturer. Ensure compliance with RoHS and halogen-free requirements if applicable to the assembly process.
Selection Notes
Select this component for applications requiring a compact footprint and efficient power switching at low voltages. The low gate threshold voltage facilitates drive from low-voltage logic sources. Consider the thermal resistance of 357 °C/W and the small package size when designing heat dissipation strategies for the PCB layout.
Part Context
This part belongs to the DMN32 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to minimize on-state resistance while maintaining superior switching performance. The series targets high-efficiency power management applications where small physical dimensions and low power consumption are critical design parameters.
Replacement Considerations
The DMN32D2LFB4-7B serves as a direct substitute regarding electrical characteristics, differing only in the tape and reel quantity per unit (10,000 units versus 3,000 units). Verify pinout compatibility and package dimensions before integrating alternative components from other manufacturers.
