DMN32D2LV-7

Overview

The DMN32D2LV-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30 V drain-source breakdown voltage (Vds) and supports a continuous drain current (Id) of 350 mA. The device exhibits a maximum on-resistance (Rds(on)) of 2.4 Ohms at a gate-source voltage (Vgs) of 4.5 V. It operates within a temperature range of -55°C to +150°C, with a power dissipation rating of 430 mW. Packaged in an SOT-563-6 surface-mount format, the component utilizes silicon technology and meets RoHS compliance standards for environmental safety.

Feature Summary

• Dual configuration integrating two independent N-channel MOSFETs within a single compact package to reduce board space.
• Enhancement mode operation designed for low-voltage switching applications requiring efficient signal control.
• Robust thermal performance capability supporting high junction temperatures up to 150°C for reliable operation.

Applications

• Low-voltage DC-DC converter circuits
• Load switching in portable electronic devices
• Battery protection and management systems

Procurement Notes

Verify the specific datasheet revision and manufacturing lot details upon order confirmation. Ensure that the receiving facility adheres to moisture sensitivity level handling procedures as indicated in the manufacturer's packaging guidelines. Confirm that the delivered components match the specified SOT-563-6 package dimensions and pinout configuration before integration into the assembly process.

Selection Notes

Select this component when a dual N-channel configuration is required in a minimal footprint. The 350 mA current rating and 2.4 Ohm on-resistance make it suitable for low-power signal switching rather than high-current power delivery. Consider the SOT-563-6 package constraints for thermal management and PCB layout density during the design phase.

Part Context

This part belongs to the DMN series of dual MOSFETs from Diodes Incorporated, which focuses on providing integrated solutions for space-constrained designs. The 'LV' suffix typically denotes low-voltage specifications, while the '7' indicates tape and reel packaging. This series complements single-channel variants by offering paired transistor functionality without increasing the overall component count on the circuit board.

Replacement Considerations

Direct replacements should maintain the SOT-563-6 package, 30 V Vds rating, and dual N-channel topology. Verify that any substitute component offers comparable Rds(on) and Id ratings to ensure circuit performance consistency. Cross-referencing with other manufacturers' dual MOSFET offerings requires careful validation of pin compatibility and thermal characteristics.