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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.89A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：890mA (Ta)
- Rds On (Max) @ Id, Vgs：400mOhm @ 590mA, 10V
- Vgs(th) (Max) @ Id：1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：38.4pF @ 15V
- Power - Max：340mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The DMN3350LDW-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source voltage rating and a continuous drain current of 250mA. The device incorporates two independent channels within an SOT-363-6 surface-mount package. Key electrical parameters include a maximum on-resistance of 400mΩ per channel, a gate-source voltage limit of ±20V, and a threshold voltage typically around 800mV. Power dissipation is rated at 350mW, with an operating temperature range spanning from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration for compact circuit integration
- Low on-resistance characteristics for efficient switching
- Enhancement mode operation with standard logic-level compatibility
- Surface-mount packaging optimized for automated assembly
Applications
- Battery protection circuits in portable devices
- Load switching applications in consumer electronics
- Signal routing and multiplexing systems
- General-purpose low-power switching tasks
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status directly with Diodes Incorporated before procurement. Confirm that the SOT-363-6 package dimensions align with your PCB footprint requirements. Ensure that thermal management strategies account for the 350mW power dissipation limit under expected operating conditions. Cross-reference the part number suffix to confirm tape and reel specifications match your manufacturing equipment capabilities.
Selection Notes
Select this component when a dual N-channel solution is required in a minimal footprint. Compare the 400mΩ on-resistance against single-channel alternatives if space allows. Consider the 250mA current limit for load requirements. Evaluate the thermal performance relative to the ambient temperature constraints of the target application environment.
Part Context
This part belongs to the DMN33 series of dual N-channel MOSFETs from Diodes Incorporated. It shares the SOT-363-6 package form factor with other variants in the family, such as the DMN33D8LDW-7. The series targets low-voltage, low-current switching applications requiring high density.
Replacement Considerations
The DMN33D8LDW-7 is a documented substitute within the same manufacturer's portfolio. Verify pinout compatibility and ensure the alternative's electrical ratings meet or exceed the original design requirements.
