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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.89A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：890mA (Ta)
- Rds On (Max) @ Id, Vgs：400mOhm @ 590mA, 10V
- Vgs(th) (Max) @ Id：1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：38.4pF @ 15V
- Power - Max：340mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMN3350LDWQ-13 is a MOSFET array manufactured by Diodes Incorporated, housed in a surface-mount SOT-363 package. It features a drain-source breakdown voltage (BVDSS) range of 25V to 30V. The device supports a continuous drain current of 890mA at ambient temperature and provides a power dissipation capacity of 340mW under the same conditions. This component is designed for compact electronic applications requiring efficient switching capabilities within low-voltage operational parameters.
Feature Summary
- Integrates multiple MOSFET functions into a single compact surface-mount package
- Optimized for low-voltage switching applications with defined thermal limits
Applications
- Consumer electronics circuit protection
- Low-voltage signal switching
- Portable device power management
Procurement Notes
Verify the specific datasheet revision and electrical characteristics against the official Diodes Incorporated documentation prior to integration. Confirm that the SOT-363 footprint and pinout align with the target PCB layout requirements. Ensure compliance with relevant environmental standards such as RoHS directives applicable to the manufacturing batch.
Selection Notes
Select this component when space-constrained designs require integrated MOSFET arrays rather than discrete single devices. Evaluate the 30V breakdown voltage and 890mA current rating against peak load requirements. Consider the 340mW thermal dissipation limit for adequate heat management within the intended operating environment.
Part Context
This part belongs to Diodes Incorporated's portfolio of field-effect transistors, specifically targeting the MOSFET category. It serves as a solution for manufacturers seeking miniaturized components for modern electronic assemblies. The product line emphasizes high-quality semiconductor performance for automotive, industrial, and computing markets.
FAQ
What is the maximum drain-source voltage for this component?
The DMN3350LDWQ-13 has a drain-source breakdown voltage (BVDSS) ranging from 25V to 30V.
Which package type does this MOSFET array use?
The component is supplied in an SOT-363 surface-mount package.
