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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.89A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：890mA (Ta)
- Rds On (Max) @ Id, Vgs：400mOhm @ 590mA, 10V
- Vgs(th) (Max) @ Id：1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：38.4pF @ 15V
- Power - Max：340mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMN3350LDWQ-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source breakdown voltage (Vds) of 30 V and a continuous drain current (Id) of 890 mA at ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 340 mOhms. It operates within a junction temperature range of -55°C to +150°C and has a power dissipation rating of 340 mW. The component is housed in an SOT-363 surface-mount package.
Feature Summary
- Dual N-channel configuration for space-efficient circuit design
- Enhancement mode operation with low gate threshold voltage
- Surface-mount SOT-363 packaging for automated assembly
Applications
- Battery protection circuits
- Signal switching applications
- Load management systems
Procurement Notes
Verify the specific ordering suffix 'Q' against the manufacturer's official documentation to confirm compliance with RoHS directives and halogen-free status. Ensure that the SOT-363 footprint matches the target PCB layout dimensions precisely. Cross-reference the datasheet revision date to confirm that electrical characteristics align with current production standards before finalizing procurement specifications.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage signal routing or load switching. The 30 V rating suits single-cell battery systems, while the 890 mA current capability supports moderate load requirements. Consider the 340 mW thermal dissipation limit for high-density layouts where heat sinking is not feasible. Verify gate drive compatibility with standard logic levels due to the specified threshold voltage characteristics.
Part Context
This part belongs to Diodes Incorporated's portfolio of small-signal MOSFETs designed for consumer electronics and portable devices. The SOT-363 package allows for high-density mounting on printed circuit boards. As a dual configuration, it reduces component count compared to using two discrete single-channel transistors, thereby optimizing board space and assembly complexity in mobile and handheld applications.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source data. Engineers should consult the manufacturer's official replacement guide or contact technical support directly for validated cross-reference information.
