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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.25A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：250mA
- Rds On (Max) @ Id, Vgs：2.4Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id：1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：1.23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：48pF @ 5V
- Power - Max：350mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The DMN33D8LDW-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V(BR)DSS) of 30V and a gate-source voltage (VGSS) rating of ±20V. The device provides a continuous drain current (ID) of 250mA at +25°C, with an on-state resistance (RDS(ON)) of 3Ω max at VGS = 4.5V. Total power dissipation is rated at 0.35W at +25°C. It utilizes a SOT-363 surface-mount package and operates within a temperature range of -55°C to +150°C.
Feature Summary
- Dual N-channel configuration designed for high efficiency power management applications
- Low on-state resistance combined with fast switching speed capabilities
- ESD protected gate structure rated up to 2kV
- Qualified to AEC-Q101 standards for automotive high reliability
Applications
- Motor Control
- Power Management Functions
- DC-DC Converters
- Backlighting
Procurement Notes
Verify the specific ordering suffix '-13' against official documentation to confirm the 10K tape and reel packaging format. Ensure that the component meets all applicable RoHS and halogen-free requirements as defined by the manufacturer's quality definitions before finalizing procurement specifications.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage power switching. Evaluate the thermal resistance characteristics and ensure the PCB layout supports the specified power dissipation limits. Confirm that the 30V breakdown voltage aligns with the system's operational voltage headroom requirements.
Part Context
This part belongs to the DMN33 series of dual N-channel MOSFETs from Diodes Incorporated. It shares the same electrical profile and package type as the DMN33D8LDW-7 variant, differing primarily in the bulk packaging quantity. Both variants are designed for similar space-constrained power management applications.
Replacement Considerations
The DMN33D8LDW-7 is a confirmed public substitute offering identical electrical characteristics and pinout but packaged in 3K reels. Verify that the target application can accommodate the different reel quantities without requiring changes to automated assembly equipment settings.
FAQ
What is the maximum continuous drain current for this device?
The maximum continuous drain current is 250mA at an ambient temperature of +25°C.
Is this component suitable for automotive applications?
Yes, the device is qualified to AEC-Q101 standards for high reliability.
What is the typical total gate charge value?
The typical total gate charge is 1.23nC when tested at VGS = 10V.
