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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.25A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：250mA (Ta)
- Rds On (Max) @ Id, Vgs：2.4Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id：1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：1.23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：48pF @ 5V
- Power - Max：350mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMN33D8LDWQ-7 is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features a maximum drain-source voltage (BVDSS) of 30V and a gate-source voltage (VGSS) rating of ±20V. The device offers low on-resistance, with RDS(ON) values of 3Ω at VGS=4.5V/ID=250mA, 5Ω at VGS=4.0V/ID=200mA, and 7Ω at VGS=2.5V/ID=100mA. Continuous drain current reaches 250mA at TA=+25°C. Total power dissipation is 0.35W at +25°C ambient temperature. The component operates within a junction temperature range of -55°C to +150°C and utilizes an SOT363 package.
Feature Summary
- Qualified to AEC-Q101 standards for high reliability in automotive environments
- Low input capacitance and fast switching speed characteristics
- ESD protected structure with totally lead-free and fully RoHS compliant construction
- Halogen and antimony free green device configuration
Applications
- Motor control circuits
- DC-DC converters
- Backlighting systems
Procurement Notes
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging quantity and reel specifications. Ensure compliance with RoHS 3 and REACH directives as stated in the datasheet. Confirm PPAP capability requirements if the application demands automotive production part approval process adherence before finalizing procurement.
Selection Notes
Select this component when a dual N-channel MOSFET solution is required for space-constrained designs using the SOT363 package. Evaluate the RDS(ON) performance at the specific gate drive voltage intended for the application, as resistance varies significantly between 2.5V and 4.5V thresholds. Consider the thermal resistance of 360°C/W for heat dissipation planning in steady-state conditions.
Part Context
This device belongs to the DMN33 series of dual N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series is engineered to meet stringent automotive reliability standards. The DMN33D8LDWQ-7 variant specifically utilizes a tape and reel packaging format containing 3,000 units per reel, distinguishing it from other variants in the family that may offer different quantities or configurations.
Replacement Considerations
Consult the official Diodes Incorporated catalog for direct replacements within the DMN33 series. Verify pinout compatibility and electrical parameters such as BVDSS and RDS(ON) when evaluating alternative dual N-channel MOSFETs from other manufacturers. Ensure any substitute meets the same AEC-Q101 qualification level if used in automotive contexts.
