DMN33D8LT-13

$0.16

Description：MOSFET N-CH 30V 115MA SOT523
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:886e62030e43 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 115MA SOT523
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4V
Rds On (Max) @ Id, Vgs：5Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id：1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：0.55 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：48 pF @ 5 V
FET Feature：-
Power Dissipation (Max)：240mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-523
Package / Case：SOT-523

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DMN33D8LT-13

Overview

The DMN33D8LT-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a gate-source voltage (VGSS) rating of ±20V. The device provides a continuous drain current (ID) of 115mA at +25°C, with a total power dissipation (PD) of 240mW on standard FR-4 substrates. Static drain-source on-resistance (RDS(ON)) is specified as 5Ω at VGS = 4V and 7Ω at VGS = 2.5V. Gate threshold voltage ranges from 0.8V to 1.5V. Dynamic characteristics include an input capacitance of 48pF and a total gate charge of 0.55nC at VGS = 4.5V. Operating temperature spans -55°C to +150°C.

Feature Summary

Low on-state resistance for high efficiency power management
Fast switching speed with low input capacitance
ESD protected gate rated at 2kV
Totally lead-free and fully RoHS compliant

Applications

DC-DC Converters
Power Management Functions
Battery Operated Systems
Solid-State Relays
Drivers for relays, solenoids, lamps, displays, memories, and transistors

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets JEDEC standards for high reliability if required by the design specifications. Ensure compliance with RoHS 2 and RoHS 3 directives regarding halogen and antimony content. Validate that the SOT523 package dimensions align with the target PCB footprint layout.

Selection Notes

Select this component for applications requiring a compact surface-mount solution with minimal on-resistance. Consider the 115mA continuous current limit when designing load circuits. Evaluate thermal performance based on the 521°C/W junction-to-ambient thermal resistance under standard mounting conditions. Verify compatibility with drive voltages, noting the RDS(ON) increases significantly below 4V gate drive.

Part Context

This part belongs to the DMN33 series of N-channel enhancement mode MOSFETs designed for high-efficiency power management. It utilizes silicon technology and is housed in a small SOT523 case material made of molded plastic with a UL 94V-0 flammability rating. The terminals feature a matte tin finish annealed over an alloy 42 leadframe, ensuring solderability per MIL-STD-208 standards.