DMN33D8LTQ-7

$0.33

Description：MOSFET N-CH 30V 115MA SOT523
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d410edd90e6a Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 115MA SOT523
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4V
Rds On (Max) @ Id, Vgs：5Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id：1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：0.55 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：48 pF @ 5 V
FET Feature：-
Power Dissipation (Max)：240mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-523
Package / Case：SOT-523

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DMN33D8LTQ-7

Overview

The DMN33D8LTQ-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 30V and a gate-source voltage (VGSS) rating of ±20V. The device provides a continuous drain current (ID) of 115mA at Ta = +25°C, with a maximum static drain-source on-resistance (RDS(ON)) of 5Ω at VGS = 4V and 7Ω at VGS = 2.5V. Total power dissipation is rated at 240mW or 300mW depending on the PCB copper area. Operating temperature ranges from -55°C to +150°C.

Feature Summary

AEC-Q101 qualified for automotive applications
ESD protected gate structure rated at 2KV
Totally lead-free and fully RoHS compliant
Small surface mount SOT523 package

Applications

Brushless DC Motor Control
DC-DC Converters
Load Switch

Procurement Notes

Verify that the specific part number suffix matches the required packaging quantity. Confirm AEC-Q101 qualification status if automotive compliance is mandatory. Ensure the ordering code aligns with the intended tape and reel specifications provided in the manufacturer's documentation.

Selection Notes

Select this component when low input capacitance and fast switching speed are required in a compact form factor. Consider the RDS(ON) limits at lower gate voltages for logic-level driving compatibility. Verify thermal resistance requirements against the available copper area on the target printed circuit board layout.

Part Context

This device belongs to the DMN33 series of N-channel MOSFETs designed for general-purpose switching and load management. It utilizes silicon technology within a molded plastic case classified as UL 94V-0 flammability rated. The product is manufactured in IATF 16949 certified facilities to support automotive supply chain standards.