DMN33D8LV-7

Overview

The DMN33D8LV-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V(BR)DSS) of 30 V and a gate-source voltage (VGSS) rating of ±20 V. The device provides a continuous drain current (ID) of 350 mA at +25°C, with a maximum static drain-source on-resistance (RDS(ON)) of 3 Ω at VGS = 4.5 V and 7 Ω at VGS = 2.5 V. Total power dissipation reaches 0.43 W at +25°C. Operating junction temperature ranges from -55 °C to +150 °C. The component utilizes an SOT563 surface-mount package.

Feature Summary

• Dual configuration integrating two independent N-channel enhancement mode MOSFETs within a single compact package.
• Optimized for low on-state resistance to minimize conduction loss while maintaining superior switching performance.
• Gate structure includes electrostatic discharge protection rated up to 2 kV.
• Qualified to AEC-Q101 standards for high reliability in automotive applications.

Applications

• Motor Control
• Power Management Functions
• DC-DC Converters
• Backlighting

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm RoHS compliance status and lead-free finish requirements prior to procurement. Ensure the selected variant matches the required thermal and electrical parameters for the target application environment.

Selection Notes

Select this component for designs requiring dual N-channel switching in a minimal footprint. Evaluate RDS(ON) limits at the intended gate drive voltage to ensure adequate current handling. Verify that the total power dissipation and thermal resistance characteristics align with the system's heat dissipation capabilities under steady-state conditions.

Part Context

This part belongs to the DMN33 series of dual N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on minimizing on-state resistance for high-efficiency power management. The DMN33D8LV-7 specifically utilizes the SOT563 case outline to provide a compact solution for portable and space-constrained electronic designs.

Replacement Considerations

Direct substitutes include other dual N-channel MOSFETs in the SOT563 package with comparable 30 V ratings and similar on-resistance values. Verify pinout compatibility and thermal characteristics when considering alternative manufacturers. Cross-referencing with the DMN33D8LTQ-7 may be relevant for single-channel applications requiring AEC-Q101 qualification.