DMN33D8LVQ-13

Overview

The DMN33D8LVQ-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a SOT563 package and operates with a drain-source voltage (V_DSS) of 30 V and a gate-source voltage (V_GSS) of ±20 V. The device supports a continuous drain current (I_D) of 350 mA at +25°C, dropping to 200 mA at +70°C. Maximum static drain-source on-resistance (R_DS(ON)) values are 3 Ω at V_GS = 4.5 V and 7 Ω at V_GS = 2.5 V. Total gate charge (Q_g) is 0.55 nC at V_GS = 4.5 V and 1.23 nC at V_GS = 10 V. Thermal characteristics include a total power dissipation (P_D) of 0.43 W at +25°C and a junction-to-ambient thermal resistance (R_θJA) of 288 °C/W.

Feature Summary

• AEC-Q101 qualified for automotive applications requiring specific change control
• Designed to minimize on-state resistance while maintaining superior switching performance
• Features ESD protected gates and low input capacitance

Applications

• Motor controls
• Power management functions
• DC-DC converters
• Backlighting

Procurement Notes

Verify the component against the official datasheet DS44888 Rev. 2 - 2 to confirm electrical parameters and package specifications. Ensure that the ordering suffix matches the required packing quantity, as the -13 suffix indicates a tape and reel carrier with a packing quantity of 10,000 units. Confirm compliance with RoHS and halogen-free requirements during the procurement process.

Selection Notes

Select this component for high-efficiency power management applications requiring a dual N-channel configuration in a compact SOT563 package. Consider the 30 V drain-source voltage rating and the specific R_DS(ON) thresholds at various gate voltages when designing circuits. Evaluate the thermal resistance and power dissipation limits to ensure adequate heat management within the operating temperature range of -55°C to +150°C.

Part Context

This part belongs to the DMN33 series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It shares similar electrical characteristics with other members of the family but is distinguished by its specific packaging and automotive qualification status. The DMN33D8LVQ variant is optimized for applications demanding low on-resistance and fast switching speeds in a small form factor.

Replacement Considerations

Direct substitutes may include other dual N-channel MOSFETs in the SOT563 package with comparable V_DSS and I_D ratings. Verify pinout compatibility and electrical parameters such as R_DS(ON) and Q_g before replacement. Consult the manufacturer's documentation for approved alternative parts or cross-reference lists to ensure functional equivalence in the target application.