DMN33D9LV-13

Overview

The DMN33D9LV-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30 V drain-source breakdown voltage and a continuous drain current of 350 mA. The device exhibits a maximum on-resistance of 2.4 Ohms at a gate-source voltage of 4.5 V. It operates within a temperature range of -55°C to +150°C junction temperature, with a power dissipation rating of 430 mW. The component utilizes a SOT-563 surface-mount package and includes an internal common source connection for simplified circuit design.

Feature Summary

• Dual N-channel configuration with integrated common source pin
• Low gate charge characteristics for efficient switching performance
• Enhanced thermal stability supporting high junction temperatures

Applications

• Battery protection circuits in portable devices
• Load switching applications in consumer electronics
• General-purpose low-side switching in mobile equipment

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm packaging details and tape-and-reel specifications. Ensure that the procurement channel provides valid traceability records and confirms compliance with relevant environmental directives such as RoHS standards prior to finalizing acquisition.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage signal or load management. The SOT-563 package offers space efficiency compared to discrete single transistors. Evaluate the 2.4 Ohm on-resistance against the specific load current requirements to ensure acceptable power loss and thermal performance within the target enclosure constraints.

Part Context

This part belongs to the DMN33 series of dual N-channel MOSFETs from Diodes Incorporated. The series focuses on providing integrated solutions for space-constrained designs requiring multiple switching elements. The DMN33D9LV variant specifically targets applications needing moderate current handling capabilities within a small footprint form factor.

Replacement Considerations

Cross-reference alternative dual N-channel MOSFETs in the SOT-563 package with comparable 30V ratings and similar on-resistance values. Verify pinout compatibility, particularly the common source configuration, before substituting. Consult official manufacturer substitution guides for confirmed equivalent parts.