ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.35A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：350mA (Ta)
- Rds On (Max) @ Id, Vgs：2.4Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id：1.4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：1.23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：48pF @ 5V
- Power - Max：430mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
Download product information
Overview
The DMN33D9LV-7A is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 350mA at +25°C. The device offers a maximum on-resistance (RDS(ON)) of 3Ω at VGS = 4.5V and 7Ω at VGS = 2.5V. Key electrical parameters include a gate threshold voltage (VGS(TH)) ranging from 0.8V to 1.4V, total gate charge (Qg) of 1.23nC at VGS = 10V, and input capacitance (Ciss) of 48pF. Thermal characteristics specify a power dissipation of 0.43W at +25°C and a junction-to-ambient thermal resistance of 288°C/W. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration in a compact SOT563 package
- Optimized for low on-state resistance and high efficiency
- Fast switching speed with low input capacitance
- ESD protected gate structure
Applications
- Motor Control
- Power Management Functions
- DC-DC Converters
- Backlighting
Procurement Notes
Verify the specific ordering suffix when sourcing components. The suffix '7A' indicates a reel size of 7 inches with a quantity of 3,000 units per reel. This variant includes a Pin 1 indicator marking on the device surface, distinguishing it electrically and functionally from the standard '7' suffix version which lacks this marking. Confirm packaging details match the required manufacturing equipment specifications before procurement.
Selection Notes
Select this component for applications requiring a dual N-channel MOSFET with a 30V rating and low on-resistance. The SOT563 package is suitable for space-constrained designs. Ensure the drive voltage meets the requirements for the desired RDS(ON), as resistance increases significantly at lower gate voltages like 2.5V. Consider the thermal resistance and power dissipation limits when designing heat management solutions for the target application environment.
Part Context
The DMN33D9LV-7A belongs to the DMN33D9LV series of dual N-channel enhancement mode MOSFETs produced by Diodes Incorporated. These devices are engineered to minimize on-state resistance while maintaining superior switching performance. The series is designed for high-efficiency power management applications, offering a balance of electrical performance and compact packaging in the SOT563 form factor.
Replacement Considerations
The DMN33D9LV-7 is a direct functional equivalent with identical electrical specifications. The primary difference is the absence of a Pin 1 indicator marking on the DMN33D9LV-7 device. Both share the same package, pinout, and performance characteristics. Verify marking requirements for assembly processes when substituting between these variants.
